55V Single N-Channel HEXFET Power MOSFET, 35 Amp continuous drain current
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Features
Parameters
Parameter
Value
Package
TO-220AB
Circuit
Discrete
Polarity
N
VBRDSS (V)
55
RDS(on) 10V (mOhms)
17.5
ID @ TC = 25C (A)
41
ID @ TC = 100C (A)
29
Qg Typ
42.0
Qgd Typ
15.3
Rth(JC)
1.8
Power Dissipation @ TC = 25C (W)
83
PbF
PbF Option Available
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